Analysis of RF magnetron sputtered MoS2 thin films for electronic application: Influence of the sputter power to film growth and composition

作者：Theresa Scheler, Pascal Illgner, Thomas Kups, Anna Linkenheil, Andrea Knauer, M. Blum, Martin Ziegler, Peter Schaaf · 发表于：Vacuum · 年份：2025 · DOI：10.1016/j.vacuum.2025.114629 · 被引用次数：5 · 研究领域：2D Materials and Applications、MXene and MAX Phase Materials、Gas Sensing Nanomaterials and Sensors

: Molybdenum disulfide (MoS 2 ) is well-known for its broad range of applications, including its use in electronic devices. This manuscript focuses on the investigation of room temperature magnetron sputtered MoS 2 with a main topic on its physical and chemical properties. The deposition process employed radio frequency magnetron sputtering method with a deposition power of 7-50 W. Structural investigations were performed using SEM, TEM, XRD and Raman spectroscopy. In this instance, correlation was identified between surface morphology, sputter power, and film thickness. The presence of both horizontally aligned and vertically aligned areas of molecular arrangement was identified and varied at the surface with deposition power and thickness. At low power, vertically aligned MoS 2 , referred to as nanowalls, could be detected, while at 50 W only a smooth surface with horizontal aligned grains could be observed. Additional tensile stress was observed in the material. The chemical analysis, conducted using XPS and EDS, investigated the surface composition and oxygen content of MoS 2 over the course of its storage in ambient atmosphere after deposition. The surface of the thin films exhibited a greater tendency for oxidation compared to the bulk. A surface formation of MoS x O y is assumed with a higher oxygen ratio at 50 W compared to 7 W deposited films, because of a higher defect density at higher sputter power which support the oxidation. In the context of 50 W films, a wafer...