Curie–Weiss‐Type Magnetic Field Tuning of Resistive Switching and Artificial Synapse Behaviors in Semiconductor Memristor

作者：Deren Li, Wenjie He, Juan Shi, Ya Nie, Yong Peng, Xi Zhang, Gang Xiang · 发表于：Advanced Functional Materials · 年份：2025 · DOI：10.1002/adfm.202513638 · 被引用次数：5 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Neuroscience and Neural Engineering

Abstract Magnetic field ( H ) tuning of memristive characteristics is desirable since the H is a non‐invasive and non‐destructive means that can be remotely applied for wide applications. However, current studies mainly focus on the memristors based on magnetic materials in the ferromagnetic region or nonmagnetic materials, where the H only exerts a small influence on the strength of magnetization ( M ), resulting in slight tuning of the key memristive parameters such as the R OFF /R ON ratio. Here, a novel strategy of H tuning is experimentally demonstrated in a memristor based on magnetic semiconductor Mn‐doped GeSe (GeMnSe, T C = 280 K) in the paramagnetic region, where the Curie–Weiss law governs and the M increases prominently with H . Notably, upon applying an H of 1000 Oe, a high R OFF /R ON ratio of 10 6 and a low power consumption of ≈1.7 × 10 −8 W, which are 10 3 higher and10 3 lower than those without applying H , respectively, can be achieved in the Ag/GeMnSe/Pt structured memristor. Moreover, the artificial synapse behaviors of the memristor are enhanced by the H . Detailed analysis shows that the H ‐tuning mechanism is rooted in magnetic coupling effects originating from the H ‐induced prominent M and internal magnetic field ( B ) in the GeMnSe layer due to the Curie–Weiss law.