Two-dimensional indium selenide wafers for integrated electronics

作者：Biao Qin, Jianfeng Jiang, Lu Wang, Quanlin Guo, Chenxi Zhang, Lin Xu, Xiangyu Ni, Peng Yin, Lian‐Mao Peng, Enge Wang, Feng Ding, Chenguang Qiu, Can Liu, Kaihui Liu · 发表于：Science · 年份：2025 · DOI：10.1126/science.adu3803 · 被引用次数：61 · 研究领域：2D Materials and Applications、MXene and MAX Phase Materials、Ferroelectric and Negative Capacitance Devices

Two-dimensional (2D) indium selenide, with its low effective mass, high thermal velocity, and exceptional electronic mobility, is a promising semiconductor for surpassing silicon electronics, but grown films have not achieved performance comparable with that of exfoliated micrometer-scale flakes. We report a solid‒liquid‒solid strategy that converts amorphous indium selenide films into pure-phase, high-crystallinity indium selenide wafers by creating an indium-rich liquid interface and maintaining a strict 1:1 stoichiometric ratio of indium to selenium. The as-obtained indium selenide films exhibit exceptional uniformity, a pure phase, and a high crystallinity across an entire ~5-centimeter wafer. Transistor arrays based on the produced indium selenide wafers demonstrate outstanding electronic performance surpassing that of all 2D film-based devices, including an extremely high mobility (averaging as high as 287 square centimeters per volt-second) and a near-Boltzmann-limit subthreshold swing (averaging as low as 67 millivolts per decade) at room temperature.