Self-assembled monolayer-modified hole transport layers for high-performance CMOS-compatible PbS quantum dot photodetectors

作者：Simin Chen, Haibo Zhu, Shuo Cheng, Haodong Tang, Xiaojian Zheng, Qianwang Chen, Yihan Song, Youming Chen, Yi Li, Yihong Tang, Fan Fang, Junjie Hao, Zeguo Tang, Keyu Zheng, Wei Chen · 发表于：Nano Research · 年份：2025 · DOI：10.26599/nr.2025.94907796 · 被引用次数：12 · 研究领域：Quantum Dots Synthesis And Properties、Nanowire Synthesis and Applications、Chalcogenide Semiconductor Thin Films

PbS colloidal quantum dots (QDs) show great promise for short-wave infrared (SWIR) photodetection due to their tunable photoresponse and cost-effective solution processability, positioning them as a strong competitor to InGaAs technologies. Inverted device architectures, essential for compatibility with CMOS readout circuits, face performance challenges due to limitations in the hole transport layer (HTL), such as porous NiO x structures that cause surface recombination at low annealing temperatures. To overcome these challenges, herein, we develop a multi-HTL strategy integrating NiO x , EDT-treated PbS, and self-assembled monolayers (SAMs) including 2PACz and MeO-2PACz, significantly boosting the performance of inverted PbS QD photodetectors, with full-fullerene-based electron transport layers (ETLs). We confirm that the SAMs can effectively block electron transfer and passivate surface defects between the HTL and active layer, with 2PACz achieving an external quantum efficiency of 53% at 1200 nm and MeO-2PACz reducing dark current to 220 nA/cm 2 , yielding a specific detectivity of 1.64 × 10 12 Jones, which represents the highest reported value under similar testing conditions and in this spectral region. This multi-HTL strategy enables high-performance SWIR imaging compatible with CMOS and TFT circuits, advancing QD-based photodetection technologies.