High-temperature memory devices based on ferroelectric ScAlN/AlGaN/GaN high-electron-mobility transistors

作者：Jie Zhang, Jiangnan Liu, Daphne Agapiou, Md. Tanvir Hasan, Ding Wang, Shubham Mondal, Yuyang Chen, Kai Sun, Zetian Mi · 发表于：Device · 年份：2025 · DOI：10.1016/j.device.2025.100845 · 被引用次数：15 · 研究领域：Acoustic Wave Resonator Technologies、Ferroelectric and Negative Capacitance Devices、Ferroelectric and Piezoelectric Materials