Interfacial Manipulation of Polar Topologies in Oxide Ferroelectric Films

作者：Yanpeng Feng, Yujia Wang, Yun‐Long Tang, Yin‐Lian Zhu, Xiuliang Ma · 发表于：Advanced Functional Materials · 年份：2025 · DOI：10.1002/adfm.202510402 · 被引用次数：6 · 研究领域：Ferroelectric and Piezoelectric Materials、Acoustic Wave Resonator Technologies、Force Microscopy Techniques and Applications

Abstract Topological polar structures hold significant potential for high‐density memories and low‐power electronic devices. Interfacial engineering offers a promising route to manipulate topological polar structures in ferroelectric heterostructures, yet the underlying mechanisms remain elusive. Here, deterministic manipulation of topological polar Bloch points and merons in epitaxial PbTiO 3 (PTO) films are demonstrated via designing symmetric and asymmetric interfaces. By integrating SrRuO 3 (SRO) and SmScO 3 (SSO) layers, it is shown that symmetric PTO/SSO interfaces effectively stabilize polar Bloch points in PTO/SSO bilayers and (PTO) 13 /(SSO) 9 superlattices whereas asymmetric configurations (e.g., SRO/PTO, SRO/PTO/SSO) favor the formation of polar merons, which are visualized by aberration‐corrected scanning transmission electron microscopy. Phase‐field simulations reveal that the stabilization of Bloch points and merons is governed by the competition between elastic and electrostatic energies. The built‐in electric field and interfacial symmetry coupling with topological textures are identified as critical factors in modulating topological stability. Piezoresponse force microscopy measurements demonstrate that the presence of polar Bloch points enhances the piezoelectric response of the ferroelectric films. These findings illustrate interfacial engineering as a key strategy for designing and stabilizing nanoscale polar topologies, which may promote their potential a...