A Review on Pre-, In-Process, and Post-Synthetic Strategies to Break the Surface Area Barrier in g-C3N4 for Energy Conversion and Environmental Remediation

作者：Mingming Gao, Minghao Zhao, Qianqian Yang, Lan Bao, Li‐Wei Chen, Wei Liu, Jing Feng · 发表于：Nanomaterials · 年份：2025 · DOI：10.3390/nano15130956 · 被引用次数：11 · 研究领域：Advanced Photocatalysis Techniques、Gas Sensing Nanomaterials and Sensors、ZnO doping and properties

Nanomaterials with large specific surface area (SSA) have emerged as pivotal platforms for energy storage and environmental remediation, primarily due to their enhanced active site exposure, improved mass transport capabilities, and superior interfacial reactivity. Among them, polymeric carbon nitride (g-C3N4) has garnered significant attention in energy and environmental applications owing to its visible-light-responsive bandgap (~2.7 eV), exceptional thermal/chemical stability, and earth-abundant composition. However, the practical performance of g-C3N4 is fundamentally constrained by intrinsic limitations, including its inherently low SSA (<20 m2/g via conventional thermal polymerization), rapid recombination of photogenerated carriers, and inefficient charge transfer kinetics. Notably, the theoretical SSA of g-C3N4 reaches 2500 m2/g, yet achieving this value remains challenging due to strong interlayer van der Waals interactions and structural collapse during synthesis. Recent advances demonstrate that state-of-the-art strategies can elevate its SSA to 50–200 m2/g. To break this surface area barrier, advanced strategies achieve SSA enhancement through three primary pathways: pre-treatment (molecular and supramolecular precursor design), in process (templating and controlled polycondensation), and post-processing (chemical exfoliation and defect engineering). This review systematically examines controllable synthesis methodologies for high-SSA g-C3N4, analyzing how SSA ...