Effects of the Total Ionizing Dose on the Single Event Transient Sensitivity of SiGe HBT Exposed to Heavy-Ion Beam

作者：J.F. Zhang, Xin Wang, Hongxia Guo, W. Hajdas, Yunyi Yan, Juan Feng, Hui Wang, Xianxiang Wu · 发表于：IEEE Transactions on Nuclear Science · 年份：2025 · DOI：10.1109/tns.2025.3579400 · 研究领域：Radiation Effects in Electronics、Radiation Detection and Scintillator Technologies、Particle Detector Development and Performance

The synergistic effects of the total ionizing dose (TID) on sensitivity to a single event transient (SET) of the SiGe HBT is investigated in a series of irradiation tests. SiGe HBTs with different biases are exposed to60Co γ-rays up to 1 Mrad(Si). The SEE transient currents observed with heavy ions at different biases are compared before and after60Co exposures. Collector transient currents seen during SEE tests are smaller for bias voltagesVC=+2 V andVC=+3 V in the γ-ray exposed devices. Reduction levels vary among samples with different bias values used in TID irradiations. Trap charges induced by the TID exposure can affect recombination processes and influence SEE observables seen during irradiations.