First Experimental Demonstration of TiN x O y Resistive Field Plate on p-GaN HEMTs With Simultaneously Enhanced BV and R on

作者：Zhuocheng Wang, Wanjun Chen, Fangzhou Wang, Cheng Yu, Xiaoming Wang, Changwei Pan, Zheyu Huang, Chao Liu, Ruize Sun, Xiaochuan Deng, Ping Yu, Yang Wang, Haiqiang Jia, Hong Chen, Bo Zhang · 发表于：IEEE Transactions on Electron Devices · 年份：2025 · DOI：10.1109/ted.2025.3574288 · 被引用次数：4 · 研究领域：GaN-based semiconductor devices and materials、Ga2O3 and related materials、Semiconductor materials and devices

This work demonstrates p-GaN high electron mobility transistors (HEMTs) with the resistive field plate (RFP) for simultaneously improved ON-state and OFF-state performance. The RFP-HEMT features a high-resistivity titanium oxynitride (TiNxOy) resistive passivation layer extending from the source toward the drain. Owing to the surface electric field (E-field) modulation effect and the 2-D electron gas (2-DEG) enhancement effect, the designed RFP-HEMTs not only realize higher breakdown voltage (BV) in the blocking state, but also achieve lower ON-state resistance (Ron) in the conductive state. Compared with the conventional insulator passivated devices, the optimized RFP-HEMTs with the gate-to-drain distance of 20 μm realize theBVof 1860 V improved by 111.36%, the specific ON-state resistance (Ron,sp) of 5.78 ± 0.34 mΩ⋅cm2decreased by 25.03%, and the Baliga figure of merit (BFOM) of 599 MW/cm2improved by 496%. Furthermore, the RFP-HEMTs exhibit an optimized dynamic/static ON-state resistance ratio, which can be attributed to the effective surfaceE-field modulation and the surface state filling. The results prove that the TiNxOyRFP technology offers a simple and efficacious approach to improve the device performance without the limit ofBV-Rontrade-off in conventional p-GaN gate HEMT design.