Electrostatic nano-mask patterned 180° domain walls in a ferroelectric film

作者：Xiangbin Cai, Yueze Tan, Chao Chen, Chao Chen, Changsheng Chen, Changsheng Chen, Xiangli Che, Chao Xu, Yan Zhao, Haiyang Pan, Yaoding Lou, Jefferson Zhe Liu, Jesús Zúñiga Pérez, Weibo Gao, Long‐Qing Chen, Jun‐Ming Liu, Deyang Chen, Ye Zhu · 发表于：Science Advances · 年份：2025 · DOI：10.1126/sciadv.adv9194 · 被引用次数：2 · 研究领域：Ferroelectric and Piezoelectric Materials、Electronic and Structural Properties of Oxides、Acoustic Wave Resonator Technologies

Ferroelectric domain walls (FDWs) exhibit exotic structural and electronic properties, positioning them as a promising functional element for next-generation nanoelectronics. However, achieving the deterministic creation of FDWs with nanoscale precision and controlled polarization of domains remains a substantial challenge for the scalable FDW-device fabrication and circuit design. Here, we demonstrate a strategy for FDW engineering by tailoring the interfacial electrostatic profile. Using SrRuO 3 islands as “nano-masks,” we spatially modulate the interfacial atomic termination to generate alternating positive and negative built-in electric fields. The boundaries where the electric field switches polarity drive the formation of 180° FDWs in BiFeO 3 thin films. This mechanism is validated through theoretical calculations and direct experimental observations. Furthermore, atomic-scale analysis reveals localized lattice distortions, structural chirality of the FDWs, as well as the edge effect of SrRuO 3 islands on the position precision of FDW nucleation. Our findings pave the way toward a scalable and controllable bottom-up FDW-growth technique for future FDW nanoelectronics.