Revolutionizing Nonvolatile Memory: Advances and Future Prospects of 2D Floating-Gate Technology

作者：Junjie Shi, Zhewei Liu, Jie Wei, Ashraful Azam, Chun‐Ho Lin, Yang Liu, Sean Li · 发表于：ACS Nano · 年份：2025 · DOI：10.1021/acsnano.5c02740 · 被引用次数：10 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Semiconductor materials and devices

Nonvolatile floating-gate memory is crucial for power-efficient and miniaturized next-generation computing but faces fundamental scaling limits in its traditional silicon-based architectures. This review explores two-dimensional (2D) materials as a revolutionary solution to overcome these constraints, redefining the future of nonvolatile memory. It provides a comprehensive analysis of the current landscape of 2D floating-gate memory research, seamlessly integrating foundational principles with cutting-edge materials and advanced device fabrication techniques. This work emphasizes the inherent trade-offs in designing these memory architectures within existing manufacturing constraints. A rigorous performance analysis benchmarks 2D floating-gate devices based on the existing understanding of their conventional counterparts, evaluating the key metrics, and demonstrating the significant advantages of 2D materials in this field. Furthermore, this review identifies key challenges that must be overcome in manufacturing technologies, spanning interface engineering, large-scale synthesis, and integration with industrial scalability. It underscores the need for high-throughput wafer-scale material growth, low-κ interlayer materials, and scalable fabrication techniques, including 3D integration. Finally, it explores future potential aspects that could lead to breakthroughs beyond the current benchmarks, solidifying the critical role of 2D floating-gate memory in next-generation, high-pe...