Tailoring Zr-vacancy induces superior thermoelectric performance of Hf-free ZrCoSb-based half-Heusler compounds

作者：Shuyue Tan, Lifeng Jiang, Saichao Cao, Donghu Zhou, Hongrui Li, Huijun Kang, Rongchun Chen, Zongning Chen, Enyu Guo, Pengfei Yu, Mingxu Xia, Tongmin Wang · 发表于：Nano Energy · 年份：2025 · DOI：10.1016/j.nanoen.2025.111213 · 被引用次数：14 · 研究领域：Advanced Thermoelectric Materials and Devices、Heusler alloys: electronic and magnetic properties、Chalcogenide Semiconductor Thin Films