Strain-Dependent Photodetection with Layered InSe Photoconductors

作者：Luke Philpott, Brett C. Johnson, Marco Fronzi, Eliza Rokhsat, Wei Luo, James A. Hutchison, Ary Anggara Wibowo, Robert Delaney, James Bullock · 发表于：Nano Letters · 年份：2025 · DOI：10.1021/acs.nanolett.5c00396 · 被引用次数：10 · 研究领域：2D Materials and Applications、Perovskite Materials and Applications、Advanced Semiconductor Detectors and Materials

Controlled bandgap modulation is of particular interest for next generation optoelectronic devices, allowing the development of ‘active’ or ‘reconfigurable’ detectors and emitters. In van der Waals layered semiconductors, which exhibit high strain tolerance, strain has become a notable tool for active bandgap tuning. In this work, we demonstrate a flexible bulk InSe gated photoconductor with strain-induced modulation of the bandgap energy, shifting to higher and lower energies under compression and tension, respectively. Photoluminescence measurements reveal shift rates of around 117.1 meV·% –1 in tension and 107.6 meV·% –1 in compression. Spectral responsivity measurements indicate smaller shift rates, likely due to nonuniform strain application. Notably, these flexible devices achieve impressive performance with specific detectivities up to 3.78 × 10 12 cm·Hz 1/2 ·W –1, a rise time of 4.1 μs, and a responsivity of 1.25 × 10 3 A·W –1 . The realization of high responsivity and fast response times underscores the potential of this device architecture for advanced optoelectronic applications.