Emerging Negative Photoconductivity Effect‐Based Synaptic Device for Optoelectronic In‐Sensor Computing

作者：Zheng Wang, Lu Lin, Jialin Meng, Tianyu Wang · 发表于：Advanced Materials · 年份：2025 · DOI：10.1002/adma.202504710 · 被引用次数：51 · 研究领域：Advanced Memory and Neural Computing、Neural Networks and Reservoir Computing、Transition Metal Oxide Nanomaterials

The emerging optoelectronic devices with positive photoconductivity (PPC) and negative photoconductivity (NPC) have promoted the development of high-performance photodetectors, non-volatile photoelectric memory, and neuromorphic computing. With advantages of high bandwidth, low power consumption, and parallel computing, NPC effect-based optoelectronic devices show great application potential in logic gates, in-sensor computing, and artificial visual systems. Material systems, device structures, and mechanisms of NPC effect-based devices are summarized for designing high-performance neuromorphic electronics. The evaluation parameters of the photoelectric properties, memory capabilities, and synaptic plasticity of optoelectronic devices are discussed for the realization of high-efficiency neuromorphic computing. Hardware and software operation of in-sensor computing for neuromorphic computing using NPC effect-based devices are systematically summarized to provide insights into future applications. The prospect and challenge are deeply discussed for advanced application scenarios, which provides valuable guidance for next-generation optoelectronic in-sensor neuromorphic computing devices.