Radiation Effects of 500 MeV Kr+ Ions on NiO/β-Ga₂O₃ Heterojunction Diodes

作者：Penghui Zhao, Hao Chen, Leidang Zhou, Teng Ma, Liang Chen, Tao Yang, Zhifeng Lei, Xing Lü, Genshu Zhou, Hui Guo, Xiaoping Ouyang · 发表于：IEEE Transactions on Nuclear Science · 年份：2025 · DOI：10.1109/tns.2025.3572942 · 被引用次数：6 · 研究领域：Ga2O3 and related materials、Luminescence Properties of Advanced Materials、Advanced Photocatalysis Techniques

This study investigates the in-situ radiation effects on NiO/β-Ga2O3heterojunction diodes (HJDs) under 500 MeV Kr+ions irradiation, with a fluence of 1×108cm-2at -200 V. The statistical results show that both the forward conductive and reverse blocking characteristics of the HJDs were degraded after the irradiation of Kr+ions. Associated with the analysis of current-voltage characteristics and the SRIM simulation results, the performance degradations were attributed to the vacancies induced by Kr+ions radiation in the β-Ga2O3material. On the one hand, the Kr+radiation-induced vacancies reduced the net carrier concentration of the β-Ga2O3and increased the generation-recombination current, leading to increased specific on-resistance and ideality factor of the irradiated HJDs. On the other hand, an oxygen di-vacancies-related trap, set at 1.07±0.01 eV below the conduction band, was involved after Kr+ions radiation, which enhanced the Poole-Frenkel emission process, dominating the higher leakage current of the irradiated HJDs beyond -300 V. These results provide valuable insights into the radiation damage and performance degradation mechanisms in β-Ga2O3-based devices for space applications.