Impact of H 2 O 2 on 4H-SiC during electrochemical anodic oxidation

作者：Pengfei Wu, Ning Liu, Xue Li, Yongwei Zhu · 发表于：Materials and Manufacturing Processes · 年份：2025 · DOI：10.1080/10426914.2025.2507062 · 被引用次数：5 · 研究领域：Semiconductor materials and devices、Anodic Oxide Films and Nanostructures、Silicon Carbide Semiconductor Technologies

Electrochemical mechanical polishing (ECMP) is a promising method for SiC wafer processing; however, the mismatch between polishing slurry and oxidation potential still results in surface etch pitting. This study presents a chemical-assisted electrochemical oxidation method for 4H-SiC, focusing on H2O2’s effect on oxidation behavior. The effects of NaNO3 and H2O2 concentrations on 4H-SiC polarization, and H2O2’s impact on surface morphology, roughness, electrochemical impedance spectra (EIS), and elemental contents at varying potentials. Results indicate that H2O2 is crucial for forming a uniform oxide layer. In 10% NaNO3 and 7% H2O2 slurry, 4H-SiC exhibits a passivation zone from −0.67 to 1.12 V. At 1.5 V, H2O2-assisted oxidation produces a smoother oxide layer . By fitting calculations of the interfacial charge transfer resistance and equivalent circuit model, the oxidation process and mechanism of chemical-assisted electrochemical oxidation of 4 h-SiC are clarified. This study provides an important reference for optimizing polishing slurry and potential in ECMP.