Na-doped Ga 2 O 3 electrolyte-gated synaptic transistors for neuromorphic computing

作者：Jierui Lin, Shuqiong Lan, Lan Yang, Qiubao Lin, Yayong Chen, Wangying Xu · 发表于：Journal of Materials Chemistry C · 年份：2025 · DOI：10.1039/d5tc01248a · 被引用次数：12 · 研究领域：Advanced Memory and Neural Computing、Perovskite Materials and Applications、Ga2O3 and related materials

This work presents Na-doped Ga 2 O 3 three-terminal electrolyte-gated synaptic transistors that successfully emulate a range of synaptic behaviors for neuromorphic computing.