Surface Morphology of 6-Inch SiC Single Crystals in Solution Growth on Si-Face, C-Face and (101¯2¯) Plane

作者：Gangqiang Liang, Jiayi Kuang, Yilin Su, Yuan Liu · 发表于：Crystals · 年份：2025 · DOI：10.3390/cryst15050472 · 被引用次数：2 · 研究领域：Silicon Carbide Semiconductor Technologies、Advanced ceramic materials synthesis、Aluminum Alloys Composites Properties

For solution growth of 6-inch 4H-SiC bulk crystals, the surface step morphology of the crystals grown on Si-face, C-face and (101¯2¯) plane was systematically characterized by laser confocal microscopy. The 2D-nucleation and step-bunching were likely to occur during the 30 h growth on Si-face, leading to a rough surface with a macro-step height over 60 μm. By contrast, the step heights were maintained at 0.1–1 μm during 60 h growth on C-face, exhibiting good morphological stability for long-term growth. Moreover, the SiC crystal grown on the (101¯2¯) plane illustrated its excellence in producing fine steps, which is attributed to the smaller interfacial energy between the solution and (101¯2¯) substrates, suggesting that it offers a better approach to growing SiC single bulk crystals.