Investigation on Temperature-Dependent Resistance States of 40nm MLC-RRAM Macro

作者：Haokai Guan, Yulin Feng, Shichao Zhong, Linbo Shan, K. Tao, Peng Huang, Zongwei Wang, Lei Sun, Lifeng Liu, Jinfeng Kang, Yimao Cai · 年份：2025 · DOI：10.1109/irps48204.2025.10983332 · 被引用次数：4 · 研究领域：Advanced Memory and Neural Computing、Semiconductor materials and devices、Polymer Nanocomposite Synthesis and Irradiation

Resistive Random-Access Memory (RRAM) is notable for its multi-level cell (MLC) capabilities, not only boosting the storage density but also enhancing efficiency in computing-in-memory (CIM) architectures. However, its conductance is highly susceptible to temperature fluctuations, challenging practical deployment. Here, we characterize the temperature-dependent resistance states of 40nm RRAM macro, indicating that conductance states have different relations with the temperature. Considering the Poole-Frenkel emission and nanowire transport, a physics model is developed to describe the resistance varying with temperature. Further, we propose the calibration method to reduce the readout and Matrix-Vector Multiplication (MVM) computation errors (5x to 25x), which is crucial for RRAM-based storage and CIM.