Moiré ferroelectricity modulates light emission from a semiconductor monolayer

作者：Dong Seob Kim, Chengxin Xiao, Roy C. Dominguez, Zhida Liu, Hamza Abudayyeh, Kyoungpyo Lee, Rigo Mayorga-Luna, Hyunsue Kim, Kenji Watanabe, Takashi Taniguchi, Chih‐Kang Shih, Yoichi Miyahara, Wang Yao, Xiaoqin Li · 发表于：Science Advances · 年份：2025 · DOI：10.1126/sciadv.adt7789 · 被引用次数：9 · 研究领域：2D Materials and Applications、Perovskite Materials and Applications、Plasmonic and Surface Plasmon Research

Semiconductor moiré superlattices, characterized by their periodic spatial light emission, unveil a new paradigm of engineered photonic materials. Here, we show that ferroelectric moiré domains formed in a twisted hexagonal boron nitride (t-hBN) substrate can modulate light emission from an adjacent semiconductor MoSe 2 monolayer. The electrostatic potential at the surface of the t-hBN substrate provides a simple way to confine excitons in the MoSe 2 monolayer. The excitons confined within the domains and at the domain walls are spectrally separated because of a pronounced Stark shift. Moreover, the patterned light emission can be dynamically controlled by electrically gating the ferroelectric domains, introducing a functionality beyond other semiconductor moiré superlattices. Our findings chart an exciting pathway for integrating nanometer-scale moiré ferroelectric domains with various optically active functional layers, paving the way for advanced nanophotonics and metasurfaces.