Selective Room-Temperature Ultrasensitive Detection of H₂S Using Au/Pd Functionalization in Si-Field-Effect Transistors

作者：Areej Shahid, Jackson Gum, Paul Beckett, James Bullock, Sudha Mokkapati, Ranjith Rajasekharan Unnithan · 发表于：IEEE Sensors Journal · 年份：2025 · DOI：10.1109/jsen.2025.3565751 · 被引用次数：2 · 研究领域：Gas Sensing Nanomaterials and Sensors、Analytical Chemistry and Sensors、Transition Metal Oxide Nanomaterials

It is becoming increasingly crucial to accurately detect and quantify toxic gases for safety in manufacturing, mining, agriculture and automobile industries. Current technologies impose a challenge of high-power consumption due to assisted recovery, cross-sensitivity, temperature/ humidity dependence, and aging of resistive sensors, which result in poor reproducibility. We present chemical-sensitive field effect-transistors (CS-FETs) fabricated on bulk silicon with Au-Pd alloy surface-functionalization, operating at room temperature with low power consumption. The thin sensing layer on the silicon channel can be modulated to switch the gate in the presence of 50 ppm H2S gas with changes in drain current response of >200% within 120 s, followed by unassisted recovery at room temperature and with a power consumption2S of ‒52.6 to 28.8%. This low-power and highly sensitive H2S sensor offers an advantage over existing bulk resistive sensors and will support the future development of single-chip, low-power, multi-gas electronic nose devices that can be mounted wirelessly for remote applications.