Enhancing Interfacial Contact in Perovskite/Silicon Tandem Solar Cells Through TaO X Passivation

作者：Yihan Sun, Zhiqin Ying, Xin Li, Meili Zhang, Xuchao Guo, Haojiang Du, Huan Li, Linhui Liu, Jun Wu, Hongwei Ma, Yunyun Yu, Ziyu He, Yuheng Zeng, Xi Yang, Jichun Ye · 发表于：Small · 年份：2025 · DOI：10.1002/smll.202503173 · 被引用次数：4 · 研究领域：Perovskite Materials and Applications、Organic Electronics and Photovoltaics、Conducting polymers and applications

Abstract Perovskite/silicon tandem solar cells demonstrating tremendous potential for commercialization that position them as a transformative technology in photovoltaics. However, the poor interface contact between perovskite and C 60 has long been a critical factor limiting the power conversion efficiency (PCE) of top perovskite solar cells. Here, a multifunctional inorganic tantalum oxide (TaO X) film as a passivation layer is introduced, which not only suppresses recombination across the interface but also improves energy level alignment and enhances charge extraction at the perovskite/C 60 interface. More importantly, TaO X demonstrates exceptional thermal stability, which significantly enhances the overall stability of the device. These synergistic effects enable the fabrication of a single‐junction cell with a PCE of 21.0% at a bandgap of 1.68 eV. Furthermore, when combined with a double‐sided tunnel oxide passivated contact silicon bottom cell, a tandem cell with a PCE of 29.5% at 1 cm 2 is achieved. Furthermore, the unencapsulated TaO X ‐based devices exhibited significantly improved stability when subjected to ISOS‐L‐1 accelerated aging conditions.