5.3 mW at 80°C, single-mode high-power 795 nm VCSEL achieved solely through intracavity design

作者：Jingfei Mu, Gaohui Yuan, Yinli Zhou, Jianwei Zhang, Chao Chen, Tianjiao Liu, Zhuo Zhang, Yuehui Xu, Tianqi Zhang, Xiaoyan Gao, Cao Yu, Xing Zhang, Yongqiang Ning, Lijun Wang · 发表于：Optics Express · 年份：2025 · DOI：10.1364/oe.561214 · 被引用次数：2 · 研究领域：Semiconductor Lasers and Optical Devices、Photonic and Optical Devices、Molecular Junctions and Nanostructures

We designed a vertical-cavity surface-emitting laser (VCSEL) that achieved high-power single-mode output with a 6 µm oxide aperture solely through cavity design. Anti-waveguide design was used to suppress the in-plane mode, which enhances the oscillation strength of the vertical cavity modes. By reducing the overlap between the oxide region and the standing wave, we minimize the refractive index difference of the columnar waveguide. Combined with the introduction of a λ/2 second cavity, The LP 11 mode is diffused into the oxidation region about 1/3, so the single mode operation was obtained. The fabricated 795 nm VCSEL achieves a maximum single-mode output power of 6.6 mW at 20°C and 5.3 mW at 80°C.