Reaction Kinetics Regulation Suppressed Carrier Recombination Loss for High‐Efficient Solution‐Based Antimony Selenosulfide Photovoltaic Devices

作者：Boyang Fu, Jun Xiong, Tianhua Jv, Shuo Chen, Tianquan Liang, Hongli Ma, Xianghua Zhang, Daocheng Pan, Bingsuo Zou, Guangxing Liang, Donglou Ren · 发表于：Advanced Energy Materials · 年份：2025 · DOI：10.1002/aenm.202500586 · 被引用次数：29 · 研究领域：Chalcogenide Semiconductor Thin Films、Quantum Dots Synthesis And Properties、Advanced Thermoelectric Materials and Devices

Abstract Carrier recombination loss within the emerging antimony selenosulfide (Sb 2 (S,Se) 3 ) photovoltaic devices is a critical factor limiting the photovoltaic performance. Herein, a reaction kinetics regulation strategy is reported to simultaneously passivate deep‐level intrinsic defect and inhibit the oxide impurities in Sb 2 (S,Se) 3 absorber with the help of sodium borohydride (SB). The SB, on one hand due to the alkaline feature, can significantly promote the decomposition of selenourea and Sb 2 Se 3 formation, eliminating the deep‐level Sb S1 defects and reducing the V S defects, and on the other hand, owing to the reducing property, can restore SbO + ions to Sb 3+ , thus inhibiting the Sb 2 O 3 formation and improving heterogeneous nucleation with preferable [hk1] orientation. These collective influences have remarkably suppressed carrier recombination loss and strengthened carrier collection with optimal band alignment. Consequently, high‐efficient Sb 2 (S,Se) 3 photovoltaic devices with an efficiency of 10.62% (0.0684 cm 2 ) are gained, which is comparable to the latest‐recorded value of 10.7% (0.0389 cm 2 ). This work provides a feasible reaction kinetics regulation method for suppressing carrier recombination loss of Sb‐based chalcogenide materials and supplies precious instruction for preparing high‐performance optoelectronic devices.