Experimental determination of giant polarization in wurtzite III-nitride semiconductors

作者：Haotian Ye, Ping Wang, Rui Wang, Jinlin Wang, Xifan Xu, Ran Feng, Tao Wang, Wen‐Yi Tong, Fang Liu, Bowen Sheng, Wenjie Ma, Bo An, Hongjian Li, Zhaoying Chen, Chun‐Gang Duan, Weikun Ge, Bo Shen, Xinqiang Wang · 发表于：Nature Communications · 年份：2025 · DOI：10.1038/s41467-025-58975-0 · 被引用次数：26 · 研究领域：GaN-based semiconductor devices and materials、Acoustic Wave Resonator Technologies、Semiconductor materials and devices

with an upward orientation in metal-polar wurtzite nitride compounds align with recent theoretical predictions. To reconcile these findings, a unified polarization framework is established based on the centrosymmetric layered-hexagonal reference structure. This unified framework redefines the polarization landscape in contemporary GaN heterostructures, quantum structures, and ferroelectric heterostructures. Furthermore, we predict significant tunability and a dramatic increase in sheet carrier concentration in ferroelectric ScAlN/GaN heterostructures, heralding advancements in high-power, high-frequency, and reconfigurable transistors, and non-volatile memories. This work bridges the critical gap in the understanding of polarization in both conventional and ferroelectric wurtzite nitrides, offering fundamental insights and paving the way for next-generation photonic, electronic, and acoustic devices.