Synthesis of p-type PbS quantum dot ink via inorganic ligand exchange in solution for high-efficiency and stable solar cells

作者：Napasuda Wichaiyo, Yuyao Wei, Chao Ding, Guozheng Shi, Witoon Yindeesuk, Liang Wang, Hua̅n Bì, Jiaqi Liu, Shuzi Hayase, Yusheng Li, Yongge Yang, Qing Shen · 发表于：Journal of Semiconductors · 年份：2025 · DOI：10.1088/1674-4926/25030003 · 被引用次数：7 · 研究领域：Quantum Dots Synthesis And Properties、Chalcogenide Semiconductor Thin Films、Nanocluster Synthesis and Applications

Abstract Traditional p-type colloidal quantum dot (CQD) hole transport layers (HTLs) used in CQD solar cells (CQDSCs) are commonly based on organic ligands exchange and the layer-by-layer (LbL) technique. Nonetheless, the ligand detachment and complex fabrication process introduce surface defects, compromising device stability and efficiency. In this work, we propose a solution-phase ligand exchange (SPLE) method utilizing inorganic ligands to develop stable p-type lead sulfide (PbS) CQD inks for the first time. Various amounts of tin (II) iodide (SnI 2 ) were mixed with lead halide (PbX 2 ; X = I, Br) in the ligand solution. By precisely controlling the SnI₂ concentration, we regulate the transition of PbS QDs from n-type to p-type. PbS CQDSCs were fabricated using two different HTL approaches: one with 1,2-ethanedithiol (EDT)-passivated QDs via the LbL method (control) and another with inorganic ligand-passivated QD ink (target). The target devices achieved a higher power conversion efficiency (PCE) of 10.93%, compared to 9.83% for the control devices. This improvement is attributed to reduced interfacial defects and enhanced carrier mobility. The proposed technique offers an efficient pathway for producing stable p-type PbS CQD inks using inorganic ligands, paving the way for high-performance and flexible CQD-based optoelectronic devices.