Mechanistic Insights into the Resistive Switching Mechanism of Quasi-2D Perovskite Memristors

作者：Hongqiang Luo, Sijia Zhou, Lihua Lu, Zhongli Guo, Shanshan Zhao, Jianfeng Du, Yikai Yun, Mengyu Chen, Cheng Li · 发表于：The Journal of Physical Chemistry Letters · 年份：2025 · DOI：10.1021/acs.jpclett.5c00633 · 被引用次数：4 · 研究领域：Perovskite Materials and Applications、Advanced Memory and Neural Computing、Conducting polymers and applications

Halide perovskite memristors are rapidly emerging as promising candidates in the fields of neural network construction, logic operation, and biological synaptic simulation. Understanding the resistive switching mechanism, yet, is crucial for ensuring the stability and reproducibility of device performance. Here, we prepare quasi-2D perovskites with enhanced performance through the optimization of molecular, solvents, and dimensions. Subsequently, the switching process of the quasi-2D perovskite memristors is directly observed by a nondestructive in situ photoluminescence (PL) imaging microscope. In addition, the elemental composition of the conductive filaments (CFs) is analyzed, showing that devices with active metal top electrodes allow the presence of both active metal CFs and halogen vacancy CFs during the resistive switching process. This work provides valuable insights into the switching mechanisms of quasi-2D perovskite memristors and enhances the prospects for their applications.