Ultralow Contact Resistivity of <0.13 Ω · mm for Normal Ti/Al/Ni/Au Ohmic Contact on Non-Recessed i-AlGaN/GaN

作者：Xiao Wang, Zhiyu Lin, Yumin Zhang, Jianfeng Wang, Ke Xu · 发表于：IEEE Transactions on Electron Devices · 年份：2025 · DOI：10.1109/ted.2025.3555265 · 被引用次数：4 · 研究领域：Semiconductor materials and devices、GaN-based semiconductor devices and materials、Semiconductor materials and interfaces

By utilizing a traditional Ti/Al/Ni/Au metal stack on i-AlGaN/GaN, we achieved an ultralow contact resistivity of∘C for 20 s, followed by a 60-s annealing at 840∘C with an optimized ramp-up rate of 10∘C/s. The formation of TixAlyAuzalloy spikes directly contacting the 2DEG is identified as the primary mechanism for the ultralow contact resistance, which we attribute to the severity of Al transitioning into a molten state during the process.