Fully Electrically Controlled Low Resistance‐Area Product and Enhanced Tunneling Magnetoresistance in the Van Der Waals Multiferroic Tunnel Junction

作者：Xiaohui Guo, Jia Zhang, K.L. Yao, Lin Zhu · 发表于：Advanced Functional Materials · 年份：2025 · DOI：10.1002/adfm.202423855 · 被引用次数：12 · 研究领域：Graphene research and applications、2D Materials and Applications、Multiferroics and related materials

Abstract The development of next‐generation spin nanomemory systems faces the challenge of achieving nonvolatile electrical control of magnetic states in magnetic tunnel junctions. Here, a strategy is proposed using trilayer van der Waals heterostructures combining an A‐type antiferromagnetic YBr 2 bilayer and a ferroelectric Al 2 Se 3 monolayer. Nonvolatile modulation of the ferroelectric polarization direction of Al 2 Se 3 can flip the interlayer magnetic coupling of YBr 2 between ferromagnetic and antiferromagnetic states. The interlayer magnetic phase transition is caused by the band structure shift and interfacial charge transfer induced by the polarization field. The TiTe 2 /2L‐YBr 2 /Al 2 Se 3 /TiTe 2 multiferroic devices achieve a fully electrically controlled tunneling magnetoresistance with a ratio of up to 11550% and an exceptionally low resistance‐area product of 0.28 Ω µm 2 by establishing a good P‐type Ohmic contact between the TiTe 2 electrode and the central heterojunction. There is also a perfect spin filtering effect. This work provides new perspectives for the development of low‐power, fast‐response, nonvolatile and fully electrically controlled spintronic memory devices.