Femtosecond laser writing of silicon vacancy color centers with specific defect orientations in silicon carbide

作者：xiaoqing liu, Yan Liu, Chengrui Tian, Runsheng Zheng, Yan Li, Junlei Wang, Qingbo Li, Xian Zhao · 发表于：Journal of Materials Chemistry C · 年份：2025 · DOI：10.1039/d5tc00336a · 被引用次数：1 · 研究领域：Laser Material Processing Techniques、Cultural Heritage Materials Analysis

High yield and precise spatial controllability of silicon vacancies can be achieved using femtosecond laser processing. Selective fabrication of V2 color centers is attainable under specific parameter conditions.