Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

作者：Thị Ngọc Ánh, Md. Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trịnh, Toan Dinh, Toan Trong Tran · 发表于：Advanced Functional Materials · 年份：2025 · DOI：10.1002/adfm.202500714 · 被引用次数：10 · 研究领域：Graphene research and applications、Diamond and Carbon-based Materials Research、Boron and Carbon Nanomaterials Research

Abstract Solid‐state quantum emitters, molecular‐sized complexes releasing a single photon at a time, have garnered much attention owing to their use as a key building block in various quantum technologies. Among these, quantum emitters in hexagonal boron nitride (hBN) have emerged as front runners with superior attributes compared to other competing platforms. These attributes are attainable thanks to the robust, two‐dimensional (2D) lattice of the material formed by the extremely strong B─N bonds. This review discusses the fundamental properties of quantum emitters in hBN and highlights recent progress in the field. The focus is on the fabrication and engineering of these quantum emitters facilitated by state‐of‐the‐art equipment. Strategies to integrate the quantum emitters with dielectric and plasmonic cavities to enhance their optical properties are summarized. The latest developments in new classes of spin‐active defects, their predicted structural configurations, and the proposed suitable quantum applications are examined. Despite the current challenges, quantum emitters in hBN have steadily become a promising platform for applications in quantum information science.