Oriented Crystallization of HgTe Quantum Dots with Low Urbach Band‐Tail for Broadband Optoelectronic Logic Gates

作者：Yichen Bu, Yadong Jiang, Zaihua Duan, Wenxin Zeng, Xing Tang, Jingwen Yang, Zhen Yuan, Huiling Tai · 发表于：Advanced Optical Materials · 年份：2025 · DOI：10.1002/adom.202500295 · 被引用次数：17 · 研究领域：Quantum Dots Synthesis And Properties、Advanced Semiconductor Detectors and Materials、Chalcogenide Semiconductor Thin Films

Abstract Photodetectors, as promising next‐generation logic gates, have garnered widespread attention and made remarkable progress in fields such as optical computing, information encryption, and visual systems in recent years. However, the photoresponse band of the currently reported optoelectronic logic gates is very narrow, mainly ultraviolet or visible light. Herein, an oriented crystallization growth strategy to synthesize broadband HgTe quantum dots (QDs) with low Urbach tail energy is proposed and further construct a HgTe QDs bilateral barrier photodetector with a bipolar response. The results show that the HgTe QDs photodetector exhibits a broadband response from 350 to 1800 nm at 0 V bias, and the −3 dB bandwidth reaches 470 kHz. The photocurrent polarity of the HgTe QDs photodetector can be modulated by the wavelength and radiation intensity at an ultra‐low bias voltage (2 mV) to achieve a bipolar response. Correspondingly, the HgTe QDs photodetector successfully achieves “AND” and “OR” logic responses. Finally, the potential applications of the HgTe QDs photodetector in multi‐valued logic programmability and adaptive selection imaging is verified. This work successfully synthesizes HgTe QDs with low trap states and provides a valuable reference for constructing broadband bipolar optoelectronic logic gates.