Acousto-Optic Modulation on Silicon-Aluminum Nitride Hybrid-Integrated Platform for Cryogenic Applications

作者：Weixiong Huang, Lipeng Xia, Jiawei Li, Yuhan Sun, Aoxue Zhang, Hong Zhang, Chang Chang, Di Wang, Wenzhen Li, Yang Li, Xiaochuan Xu, Tao Wu, Yi Zou · 发表于：Nano Letters · 年份：2025 · DOI：10.1021/acs.nanolett.4c05680 · 被引用次数：8 · 研究领域：Photonic and Optical Devices、Mechanical and Optical Resonators、Acoustic Wave Resonator Technologies

Silicon platforms are widely recognized as an industry standard for photonic integrated circuits. However, conventional tuning mechanisms, such as thermo-optic and plasma dispersion effects, impose limitations in advanced applications, such as quantum computing, where low-loss and cryogenic operation are critical. Acousto-optic (AO) modulation offers a promising alternative, broadening the scope of silicon photonics. Here, we investigate an aluminum nitride (AlN)-silicon hybrid platform to enable AO modulation on silicon waveguides. The AO interaction is enhanced through a Fabry–Perot resonant cavity, achieving a π-phase shift voltage ( V π ) of 27.8 V and a half-wave voltage-length product ( V π L ) of 0.55 V·cm with a modulation length of 200 μm. We also demonstrate AO modulation under cryogenic conditions, where the device performance metrics improve to 16.5 V and 0.33 V·cm, respectively. Fabricated using complementary metal-oxide-semiconductor-compatible processes, this AlN-silicon device offers seamless integration with photonic and electronic components, underscoring its potential for next-generation photonic systems.