Study of single event effect failure mechanism in P-GaN HEMTs based on experimental and TCAD simulation

作者：Hao Huang, Ying Wang, Xin-Xing Fei, Biao Sun, Huolin Huang, Yanxing Song, Fei Cao · 发表于：Radiation Physics and Chemistry · 年份：2025 · DOI：10.1016/j.radphyschem.2025.112698 · 被引用次数：11 · 研究领域：GaN-based semiconductor devices and materials、Radiation Effects in Electronics、Semiconductor Quantum Structures and Devices