Contact Resistance Optimization in MoS 2 Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

作者：Yuan Fa, Agata Piacentini, Bart Macco, H. Kalisch, M. Heuken, Andrei Vescan, Zhenxing Wang, Max C. Lemme · 发表于：ACS Applied Materials & Interfaces · 年份：2025 · DOI：10.1021/acsami.4c21596 · 被引用次数：20 · 研究领域：2D Materials and Applications、MXene and MAX Phase Materials、Graphene research and applications

High Resolution Image Download MS PowerPoint Slide Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS 2 )-FETs, have gained significant attention for their potential for ultrashort channels, thereby extending Moore’s law. However, MoS 2 –FETs are prone to the formation of Schottky barriers at the metal-MoS 2 interface, resulting in high contact resistance ( R c ) and, consequently, reduced transistor currents in the ON-state. Our study explores the modification of MoS 2 to induce the formation of conductive 1T-MoS 2 at the metal-MoS 2 interface via reverse sputtering. MoS 2 –FETs exposed to optimized reverse sputtering conditions in the contact area show R c values reduced to less than 50% of their untreated counterparts. This reduction translates into improvements in other electrical characteristics, such as higher ON-state currents. Since reverse sputtering is a standard semiconductor process that enhances the electrical performance of MoS 2 –FETs, it has great potential for broader application scenarios in 2DM-based microelectronic devices and circuits.