Reconfigurable Dual‐Gate Ferroelectric Field‐Effect Transistors Based on Semiconducting Polymer for Logic Operations and Synaptic Applications

作者：Yuqing Ding, Xinzhao Xu, Yangjiang Wu, Haoqin Zhang, Haoqin Zhang, Lin Shao, Zhihui Wang, Hailing Zhang, Hailing Zhang, Yan Zhao, Yunqi Liu · 发表于：SmartMat · 年份：2025 · DOI：10.1002/smm2.70003 · 被引用次数：11 · 研究领域：Advanced Memory and Neural Computing、Neuroscience and Neural Engineering、Conducting polymers and applications

ABSTRACT Organic field‐effect transistors (OFETs), with their potential for low‐cost manufacturing and compatibility with flexible substrates, have emerged as an indispensable element in next‐generation electronics. However, the existing OFETs are significantly hindered by their lack of reconfigurability and multifunctionality for application in complex electronic systems. To address these limitations, we propose a novel design strategy to develop a dual‐gate organic field‐effect transistor (DG‐OFET), primarily featuring a synergistic combination of interface charge trapping and the nonvolatile nature of ferroelectric polarization, which realizes the multifunctional integration within a single platform. Specifically, the DG‐OFET can be utilized as synaptic devices that can successfully perform both short‐term and long‐term synaptic plasticity by manipulating the input gate of artificial pulse voltages, depending on the switching mechanism between bottom‐gate controlled electrostatic doping and top‐gate induced ferroelectric polarization. Besides, the presynaptic spike applied to a specific gate electrode can trigger the excitatory and inhibitory postsynaptic current response. The potentiation and depression of synaptic weight are mimicked by consecutive positive and negative spikes, respectively. The dual‐gate coupling strategy further expands its functionality towards simulating the operation of logic gates. By modulating the combination of dual‐gate input signals, the chann...