Ferroelectricity in Orthorhombic Zirconia Thin Films

作者：Xianglong Li, Zengxu Xu, Songbai Hu, Mingqiang Gu, Yuanmin Zhu, Qi Liu, Yihao Yang, Mao Ye, Jingxuan Li, Lang Chen · 发表于：Nano Letters · 年份：2025 · DOI：10.1021/acs.nanolett.4c05612 · 被引用次数：7 · 研究领域：Ferroelectric and Negative Capacitance Devices、Ferroelectric and Piezoelectric Materials、Advanced Memory and Neural Computing

Ferroelectric fluorite oxides such as hafnium (HfO 2 )-based materials are one of the most promising candidates for future large-scale integrated circuits (ICs), while zirconia (ZrO 2 )-based fluorite materials, which have the same structure as HfO 2 and more abundant resources and lower cost of raw materials, are usually thought to be anti- or ferroelectric-like. Here, we report a remanent polarization ( P r ) of ∼15 μC/cm 2 in orthorhombic ZrO 2 thin films at 77 K. This ferroelectricity arises from an electric field-induced antiferroelectric to ferroelectric phase transition, which is particularly noticeable at 77 K. Our work reveals the ferroelectricity in ZrO 2 thin films and offers a new pathway to understand the origin of ferroelectricity in fluorite oxides.