Highly Efficient AlGaInP-Based Micro-LEDs Achieved by Plasma Sidewall Treatment

作者：Minhua Li, Xi Zheng, Kang Zhang, Chenming Zhong, Zhicheng Lü, Yijun Lü, Zhong Chen, Weijie Guo · 发表于：IEEE Transactions on Electron Devices · 年份：2025 · DOI：10.1109/ted.2025.3541621 · 被引用次数：6 · 研究领域：GaN-based semiconductor devices and materials、Thin-Film Transistor Technologies、Semiconductor Lasers and Optical Devices

The advancement of high-performance AlGaInP-based red micro-light-emitting diodes (micro-LEDs) has been significantly impeded by nonradiative recombination occurring at the sidewall surface, attributed to their extended carrier diffusion length. To address this issue, argon plasma treatment has been employed after dry etching of mesa to suppress the nonradiative recombination at sidewall, demonstrating that the external quantum efficiency (EQE) of micro-LEDs has been improved. The effectiveness of the argon plasma sidewall treatment was assessed through spatially resolved temperature-dependent carrier recombination dynamics.