Unveiling the Intricate Dynamic Charactristics of FeFETs with a MFMIS Structure: Experiment and Modeling

作者：Xiaolin Wang, Zijie Zheng, Leming Jiao, Xuanqi Chen, Yang Feng, Chen Sun, Zuopu Zhou, Dong Zhang, Gan Liu, Bich-Yen Nguyen, Gengchiau Liang, Kai Ni, Xiao Gong · 年份：2024 · DOI：10.1109/iedm50854.2024.10873561 · 被引用次数：6 · 研究领域：Ferroelectric and Negative Capacitance Devices、Metal and Thin Film Mechanics、Advancements in Semiconductor Devices and Circuit Design

A dynamic model is established to gain deep insights into the operation mechanisms and predict the performance of the FeFETs under various operation speeds employing a metal-ferroelectric (FE)-metal-insulator-semiconductor (MFMIS) structure. Empowered by extensive experimental calibration and in-depth analysis based on our IGZO FeFETs with a MFMIS structure, for the first time, several key findings are unveiled: (1) The dynamic response of the MFMIS structure can be defined into three stages, matching the different response speeds of FE switching and charge trapping (CT); (2) The erasing (ERS) of the FeFETs, especially for devices based on oxide semiconductor (OS) channel, highly relies on the CT within floating gate (FG) accumulated during the programming (PGM); (3) The high-speed operation not only suppresses CT but also CT-assisted FE switching, leading to a limited MW; (4) Beyond a critical ERS time, further negative switching of FE layer ceases and instead accelerates FE depolarization; (5) AR (area ratio between the FE layer and the baseline MOSFET) engineering can enhance MW under ultra-fast operation, but is only effective within a limited AR range and at the expense of increased area consumption. Motivated and inspired by these discoveries, we propose three effective strategies to improve the dynamic performance of the MFMIS FeFETs: thickness engineering of FE and insulator layers, and aggressive device down-scaling. These approaches are substantiated by both simulat...