Stacked Channel Transistors with 2D Materials: An Integration Perspective

作者：Yun-Yan Chung, Bo-Jhih Chou, Wei‐Sheng Yun, Chen-Feng Hsu, Shao-Ming Yu, Yu-I Chang, Chen‐Yi Lee, Sui-An Chou, Po‐Hsun Ho, Aslan Wei, D. Mahaveer Sathaiya, Bo-Heng Liu, Chien-Wei Chen, Chien-Ying Su, Chi‐Chung Kei, Fu-Kuo Hsueh, Tuo‐Hung Hou, Wen‐Hao Chang, Jin Cai, Chung-Cheng Wu, Jeff Wu, Wei‐Yen Woon, Tung-Ying Lee, Chao-Hsin Chien, Chao-Ching Cheng, Iuliana Radu · 年份：2024 · DOI：10.1109/iedm50854.2024.10873421 · 被引用次数：11 · 研究领域：Semiconductor materials and devices、Nanowire Synthesis and Applications

This report presents the first electrical demonstration of a stacked nanosheet (NS) FET with a monolayer MoS2channel, utilizing a typical nanosheet release process prior to high-$\kappa$metal gate deposition. We demonstrate the fabrication of flat, two-stacked nanosheets with a monolayer MoS2channel and a conformal$\text{HfO}_{\mathrm{X}}/\text{TiN}$gate stack. The stacked nanosheets exhibit good release behavior, allowing for an integration scheme that supports gate lengths of up to 250 nm.$\mathbf{I}_{\text{MAX}}/\mathbf{I}_{\text{MIN}}$ratios of ~1E5 and a subthreshold swing of ~220 mV/dec are reported. Additionally, for the first time, the integration of stacked two NS WSe2 and two NS MoS2in the same structural FET is demonstrated using the NS release and high$-\kappa$metal gate conformal deposition process. The two channel materials represent typical PMOS and NMOS 2D materials, respectively.