Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD

作者：Xiao Wang, Xiao Wang, Yumin Zhang, Jianfeng Wang, Mengyi Wang, Jianfeng Wang, Ke Xu · 发表于：Vacuum · 年份：2025 · DOI：10.1016/j.vacuum.2025.114135 · 被引用次数：6 · 研究领域：GaN-based semiconductor devices and materials、Ga2O3 and related materials、ZnO doping and properties