Phase change based heat transfer for thermal management of metal-oxide-semiconductor field-effect transistors

作者：Haocheng Wang, Kean How Cheah, Jing Wang, Hainam Do, He Zhang, Yong Ren · 发表于：Journal of Energy Storage · 年份：2025 · DOI：10.1016/j.est.2025.115805 · 被引用次数：4 · 研究领域：Thermal properties of materials、Phase-change materials and chalcogenides、Thin-Film Transistor Technologies

With the rapid advancement of science and technology , various electric drive devices and electrical systems are increasingly being utilized in the field of industrial manufacturing. The power semiconductors in this domain are primarily silicon-based insulated gate bipolar transistors (IGBTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs). Temperature has a direct impact on the lifespan of MOSFETs and their surrounding components. Therefore, it is necessary to optimize the thermal management capabilities of MOSFET systems. In this study, computational fluid dynamics is employed to theoretically investigate the importance of including phase change material (PCM) in MOSFET systems for enhanced heat dissipation. Additionally, the impact of numerous factors, such as the shape of the MOSFET/PCM system, the type of PCM used for filling, the material of the system's main framework, and the heat transfer coefficient between the system's surface and the surrounding air on the system's thermal management capabilities were evaluated. The results demonstrate that the inclusion of PCM significantly enhances the thermal management capabilities of MOSFET systems. At the end of the simulation, the average temperature of the MOSFET in the experimental group filled with PCM-RT70HC is 49.23 % lower than that in the group without PCM filling. Considering both heat dissipation capacity and practical application difficulties, the rectangular shape is considered the most optimal f...