Delta Doping in Silicon by Argon Ion Preimplantation and Nanosecond Laser Annealing

作者：Zhengfang Fan, Yumeng Liu, Yizhuo Wang, Wenhan Song, Hao Wei, Shuwen Guo, He Li, Yaping Dan · 发表于：ACS Applied Electronic Materials · 年份：2025 · DOI：10.1021/acsaelm.4c02133 · 被引用次数：2 · 研究领域：Integrated Circuits and Semiconductor Failure Analysis、Ion-surface interactions and analysis、Silicon and Solar Cell Technologies

Delta doping (δ-doping) has extensive applications in advanced metal oxide semiconductor field effect transistors, quantum devices, and deep ultraviolet (DUV) photodetectors. In this work, we demonstrate a novel method for high-concentration phosphorus δ-doping in silicon using pulsed laser annealing assisted with argon preimplantation. The δ-doping layer has a peak phosphorus concentration of 1.44 × 10 20 cm –3 . Low-temperature Hall measurements reveal that the δ-doping layer is in a metallic state and exhibits a weak localization phenomenon, which implies the formation of a two-dimensional electron gas. As a demonstration, a highly sensitive deep UV photodetector is fabricated by forming an n-type δ-doping layer on a p-type Si substrate. The photoresponsivity of our δ doping PN junction photodiodes is 0.124 A/W, more than 2 times higher than that of the commercial photodiode. This finding offers a promising route for the realization of a highly doped δ-doping layer in silicon, with potential applications in a variety of electronic and optoelectronic devices.