Pressure Sensors Based on the Third-Generation Semiconductor Silicon Carbide: A Comprehensive Review

作者：Xudong Fang, Chen Wu, Bian Tian, Libo Zhao, Xueyong Wei, Zhuangde Jiang · 发表于：Engineering · 年份：2025 · DOI：10.1016/j.eng.2024.12.036 · 被引用次数：26 · 研究领域：Thin-Film Transistor Technologies、Gas Sensing Nanomaterials and Sensors、Nanowire Synthesis and Applications

Microelectromechanical system (MEMS) high-temperature pressure sensors are widely used in aerospace, petrochemical industries, automotive electronics, and other fields owing to their advantages of miniaturization, lightweight design, simplified signal processing, and high accuracy. In recent years, advances in semiconductor material growth technology and intelligent equipment operation have significantly increased interest in high-temperature pressure sensors based on the third-generation semiconductor silicon carbide (SiC). This review examines the material properties of SiC single crystals and discusses several technologies influencing the performance of SiC pressure sensors, including the piezoresistive effect, ohmic contact, etching processes, and packaging methodologies. Additionally, it explores future research directions in the field. The review highlights the importance of increasing operating temperatures and advancing sensor integration as critical trends for future SiC high-temperature pressure sensor research and applications.