PO 4 3− Tetrahedron Assisted Chelate Engineering for 10.67%‐Efficient Antimony Selenosulfide Solar Cells

作者：Donglou Ren, Boyang Fu, Jun Xiong, Yi Wang, Bin Zhu, Shuo Chen, Zhiqiang Li, Hongli Ma, Xianghua Zhang, Daocheng Pan, Bingsuo Zou, Guangxing Liang · 发表于：Advanced Materials · 年份：2025 · DOI：10.1002/adma.202416885 · 被引用次数：66 · 研究领域：Chalcogenide Semiconductor Thin Films、Quantum Dots Synthesis And Properties、Perovskite Materials and Applications

Abstract Anisotropic carrier transport and deep‐level defect of antimony selenosulfide (Sb 2 (S,Se) 3 ) absorber are two vital auses restraining the photovoltaic performance of this emerging thin‐film solar cell. Herein, chelate engineering is proposed to prepare high‐quality Sb 2 (S,Se) 3 film based on hydrothermal deposition approach, which realizes desirable carrier transport and passivated defects by using tetrahedral PO 4 3− ion in dibasic sodium phosphate (Na 2 HPO 4 , DSP). The PO 4 3− Lewis structure, on one hand in the form of [(SbO) 3 (PO 4 )] chelate, can adsorb on the polar planes of cadmium sulfide (CdS) layer, promoting the heterogeneous nucleation, and on the other hand, the tetrahedral PO 4 3− inhibits horizontal growth of (Sb 4 S(e) 6 ) n ribbons due to size effects, thus achieving desirable [hk1] orientation. Moreover, the introduction PO 4 3− effectively passivates the antisite defect Sb S1 . These synergistic effects have effectively improved carrier transport and reduced non‐radiative recombination of the Sb 2 (S,Se) 3 absorber. Consequently, the DSP‐modified Sb 2 (S,Se) 3 device efficiency increases from 8.59% to 10.67%.