Investigation on Short-Circuit Characteristics and Failure Modes of SiC Planar MOSFETs With Linear and Hexagonal Topologies

作者：Huan Wu, Houcai Luo, Jingping Zhang, Bofeng Zheng, Ruonan Wang, Guoqi Zhang, Xianping Chen · 发表于：IEEE Journal of Emerging and Selected Topics in Power Electronics · 年份：2025 · DOI：10.1109/jestpe.2025.3527366 · 被引用次数：7 · 研究领域：Silicon Carbide Semiconductor Technologies、Semiconductor materials and devices、Aluminum Alloys Composites Properties

This paper compares and evaluates the single pulse short-circuit robustness of SiC MOSFETs with linear and hexagonal cell topologies under different gate voltages, bus voltages, and case temperatures. The short-circuit failure mechanisms of the linear and hexagonal cell topologies are studied. A new switching model for gate failure and thermal runaway short-circuit failure modes is proposed and analyzed. The robustness performance of the linear and hexagonal cell topologies is compared and evaluated under the same short-circuit power for the first time, fully revealing the comprehensive impact mechanism of cell topologies on the short-circuit robustness for SiC MOSFETs.