Application of ZnO/CeO2 novel abrasive to quartz glass in photochemical mechanical polishing (PCMP)

作者：Wenliang Chen, Jilin Wang, Xin Tang, Xiaodong An, Wenke Guan, Changyu Liu, Daijiang Peng · 发表于：Ceramics International · 年份：2025 · DOI：10.1016/j.ceramint.2025.01.003 · 被引用次数：10 · 研究领域：Advanced Surface Polishing Techniques、Minerals Flotation and Separation Techniques、Electronic and Structural Properties of Oxides

This experiment used a two-step method to synthesize ZnO/CeO 2 nanoparticle abrasives and applied to photochemical mechanical polishing (PCMP). Morphological, structural, and optical characterizations were carried out to investigate the removal mechanism of ZnO/CeO 2 abrasives during PCMP. The notable enhancement in Ce 3+ and oxygen vacancy of CeO 2 after the loading modification of ZnO is attributed as the key factor in enhancing frictional chemical reactivity and material removal efficiency. The formed ZnO/CeO 2 heterojunction contributes to the effective separation of photogenerated carriers and the generation of highly oxidized reactive groups (O. 2 - , ˙OH, and HO˙ 2 ), which promotes the formation of photochemical reactive layers, softens the polishing substrate, and significantly improves the polishing performance of the abrasive. Three abrasives, CeO 2 , ZnO/CeO 2 , and commercial CeO 2 , were evaluated in terms of surface morphology , roughness (Sa), and material removal rate (MRR) following PCMP treatment. The polishing results revealed that the 3 % ZnO/CeO 2 abrasive achieved a high-quality flat surface with significantly reduced roughness (decreasing from 1.306 nm to 0.244 nm), Sa reduced by 81.3 %. In addition, the material removal rate (MRR) showed an improvement of 87.5 % and 50.0 % compared to CeO 2 and commercial CeO 2 , respectively.