Preparation of β-Ga2O3/ε-Ga2O3 type II phase junctions by atmospheric pressure chemical vapor deposition

作者：Xianxu Li, Jiale Niu, Lijian Bai, Xue Jing, Dongwen Gao, Jiajun Deng, Fangchao Lu, Wenjie Wang · 发表于：Ceramics International · 年份：2025 · DOI：10.1016/j.ceramint.2024.12.472 · 被引用次数：8 · 研究领域：Ga2O3 and related materials、Advanced Photocatalysis Techniques、ZnO doping and properties

We synthesized β-Ga 2 O 3 /ε-Ga 2 O 3 phase junctions by exploiting distinct crystalline phases in gallium oxide through a one-step atmospheric-pressure chemical vapor deposition process on sapphire substrates , adjusting parameters such as temperature and gas flow rate accordingly. The coexistence of these two crystalline phases was verified via X-ray diffraction (XRD) and Raman spectroscopy analyses, while optical microscopy provided visual evidence regarding surface morphology changes throughout phase junction formation stages. Furthermore, we utilized a UV–visible spectrophotometer to quantify the bandgap and integrated this data with X-ray photoelectron spectroscopy (XPS) analysis of core level peaks and valence band spectra in order to construct an energy level structure for the β-Ga 2 O 3 /ε-Ga 2 O 3 phase junction. Our findings demonstrate that this phase junction exhibits a type II energy band alignment, with measured valence and conduction band offsets of 0.54 eV and 0.41 eV respectively. This discovery holds significant implications for self-powered photodetectors utilizing gallium oxide as well as other potential applications.