Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe 3 GaTe 2 /hBN/Fe 3 GaTe 2

作者：Lihao Zhang, Miao He, Xiaoyu Wang, Haodong Zhang, Keying Han, Yonglai Liu, Lei Zhang, Yingchun Cheng, Jie Pan, Zhe Qu, Zhe Wang · 发表于：Journal of Physics D Applied Physics · 年份：2024 · DOI：10.1088/1361-6463/ada44c · 被引用次数：4 · 研究领域：2D Materials and Applications、Iron-based superconductors research、Graphene research and applications

Abstract We report the bias voltage-controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe 3 GaTe 2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs consistently at around 0.625 V across multiple devices and temperatures, highlighting the robustness of the effect. To understand this behavior, we developed a theoretical model incorporating spin-resolved density of states (DOS) at high energy levels. By adjusting the DOS weighting at different k-points to account for misalignment between the crystal structure of electrodes in experimental devices, we improved agreement between experimental and theoretical inversion voltages. Our results provide valuable insight into the voltage-controlled spin injection and detection in two-dimensional magnetic tunnel junctions, with implications for the development of energy-efficient spintronic devices.