Electronic Assessment of Novel Nanosheet RFET With Dual-Doped Source/Drain

作者：Jianing Zhang, Yabin Sun, Xiaojin Li, Yanling Shi, Ziyu Liu · 发表于：IEEE Transactions on Electron Devices · 年份：2024 · DOI：10.1109/ted.2024.3514828 · 被引用次数：6 · 研究领域：Integrated Circuits and Semiconductor Failure Analysis、Advancements in Semiconductor Devices and Circuit Design、VLSI and Analog Circuit Testing

To overcome the limitation of lower on-current in conventional Schottky barrier reconfigurable field-effect transistors (SB-RFETs) with metal source/drain, a novel nanosheet reconfigurable field-effect transistor (RFET) with dual-doped source/drain (DD-RFET) is proposed in this work for the first time. Compared to the conventional SB-RFET, the on-state current${I}_{\text {on}}$improves by$61.4\times $for n-type program and$42.8\times $for p-type program, respectively. The thermal carrier emission instead of Schottky tunneling is demonstrated to contribute for the improved driven current in the proposed DD-RFET. The impact of geometric sizes and materials, such as control-gate length (${L}_{\text {CG}}$), program gate length (${L}_{\text {PG}}$), and spacer dielectric constant (${K}_{\text {SP}}$), is investigated in detail. The key metrics, including on-state current${I}_{\text {on}}$, off-sate current${I}_{\text {off}}$, maximum of transconductance$\text {g}_{\max }$, and intrinsic delay$\tau _{\text {d}}$, are used to evaluate the performance during optimization. This article provides solutions for RFET in high-performance applications.